cha7012 rohs compliant ref. : dscha70129082- 23 march 09 1/10 specificatio ns subject to change without notice united monolithic semiconductors s.a.s. route dpartementale 128 - b.p.46 - 91401 orsay cede x france tel. : +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 x-band hbt high power amplifier gaas monolithic microwave ic description the cha7012 chip is a monolithic two-stage gaas high power amplifier designed for x band applications. this device is manufactured using a gainp hbt process, including, via holes through the substrate and air bridge. a nitride layer protects the transistors and the passive components. special heat removal techniques are implemented to guarantee high reliability. to simplify the assembly process: -the backside of the chip is both rf and dc grounded -bond pads and back side are gold plated for compatibility with eutectic die attach method and thermosonic or thermo compression bonding process. main features frequency band: 9.2 -10.4ghz output power (p3db ): 38.5dbm high linear gain: > 20db high pae: > 38% two biasing modes: -vdigital control thanks to ttl interface -vanalog control thanks to biasing circuit chip size : 5.00 x 3.68 x 0.1mm main characteristics vc=7.5v, ic (quiescent) = 1.9a, pulse width=100s, duty cycle = 20% symbol parameter min typ max unit fop operating frequency range 9.2 10.4 ghz psat saturated output power @ 25c 9 w p_3dbc output power @ 3dbc @ 25c 7 w g small signal gain @ 25c 20 db top operating temperature range -40 +80 c esd protections: electrostatic discharge sensitive device. observe handling precautions! 16 20 24 28 32 36 40 44 9 9.2 9.4 9.6 9.8 10 10.2 10.4 10.6 frequency ( ghz) pout & pae@3dbc , linear gain linear gain (pin=0dbm) pae@3dbc (%) pout@3dbc(dbm pout & pae @3dbc and linear gain @ 25c in out ti vc biasing circuit vctrl ttl circuit to vc vc vctrl to vc vc ti vc biasing circuit ttl circuit in out ti vc biasing circuit vctrl ttl circuit to vc vc vctrl to vc vc ti vc biasing circuit ttl circuit
cha7012 x-band high power amplifier ref. : dscha70129082- 23 march 09 2/10 specificatio ns subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 electrical characteristics tamb = 20c, vc=7.5v, ic (quiescent) = 1.9a, pulse width=100s, duty cycle = 20% symbol parameter min typ max unit fop operating frequency 9.2 10.4 ghz g small signal gain 17.5 20 23 db g_t small signal gain variation versus temperature -0.025 db/c rlin input return loss 8 10 db rlout output return loss 8 12 db psat saturated output power 39.5 dbm psat_t saturated output power variation versus temperature -0.01 db/c p_3dbc output power @ 3dbc (3) 38 38.5 dbm pae_3dbc power added efficiency @ 3dbc 34 38 % vc power supply voltage (3) 7.5 8 v ic power supply quiescent current (1) 1.9 a ti ttl input voltage 0 5 v i_ti ttl input current 1 ma vctrl collector control voltage 5 v zctr vctrl input port impedance (2) 350 ohm top operating temperature range -40 +80 c (1) parameter tunable by vctrl when control biasing circuit used. (2) this value corresponds to the 4 ports in parall el (pin 4, 8, 14, 18) (3) 0.5v variation on vc leads to around 0.4db vari ation of the output power (impact on robustness see maximum ratings) absolute maximum ratings (1) tamb = 20c symbol parameter values unit cmp compression level (2) 6 dbc vc power supply voltage with rf 8 v ic power supply quiescent current 2.8 a ic_sat power supply current in saturation 3.5 a vctrl collector current control voltage 6.5 v tj maximum junction temperature 175 c tstg storage temperature range -55 to +125 c (1) operation of this device above anyone of these parameters may cause permanent damage. (2) for higher compression the level limit can be increased by decreasing the voltage vc using the rate 0.5 v / dbc equivalent thermal resistance to backside: 6c/w
x-band high power amplifier cha7012 ref. : dscha70129082- 23 march 09 3/10 specificatio ns subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 typical measured characteristics measurements on jig vc=7.5v, vttl=5v, ic (quiescent) = 1.9a, pulse widt h=100s, duty cycle = 20% 10 12 14 16 18 20 22 24 26 28 30 8.5 8.7 8.9 9.1 9.3 9.5 9.7 9.9 10.1 10.3 10.5 10.7 10.9 11.1 frequency (ghz) linear gain (db) +20c +80c -40c linear gain versus frequency and temperature 32 33 34 35 36 37 38 39 40 41 42 8.5 8.7 8.9 9.1 9.3 9.5 9.7 9.9 10.1 10.3 10.5 10.7 10.9 11.1 frequency (ghz) pout (dbm) +20c +80c -40c output power @ 3dbc versus frequency and temperatur e
cha7012 x-band high power amplifier ref. : dscha70129082- 23 march 09 4/10 specificatio ns subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 20 25 30 35 40 45 50 8.5 8.7 8.9 9.1 9.3 9.5 9.7 9.9 10.1 10.3 10.5 10.7 10.9 11.1 frequency (ghz) pae (% ) +20c +80c -40c pae @ 3dbc versus frequency and temperature 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 8.5 8.7 8.9 9.1 9.3 9.5 9.7 9.9 10.1 10.3 10.5 10.7 10.9 11.1 frequency (ghz) ic (a ) +20c +80c -40c ic @ 3dbc versus frequency and temperature
x-band high power amplifier cha7012 ref. : dscha70129082- 23 march 09 5/10 specificatio ns subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 26 28 30 32 34 36 38 40 -1 0 1 2 3 4 5 6 7 8 compression (db) pout (db) 9.2ghz 9.4ghz 9.6ghz 9.8ghz 10ghz 10.2ghz 10.4ghz output power @ 25c versus compression and frequenc y 0 5 10 15 20 25 30 35 40 45 50 -1 0 1 2 3 4 5 6 7 8 compression (db) pae (%) 9.2ghz 9.4ghz 9.6ghz 9.8ghz 10ghz 10.2ghz 10.4ghz pae @ 25c versus compression and frequency
cha7012 x-band high power amplifier ref. : dscha70129082- 23 march 09 6/10 specificatio ns subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 -1 0 1 2 3 4 5 6 7 8 compression (db) ic (a) 9.2ghz 9.4ghz 9.6ghz 9.8ghz 10ghz 10.2ghz 10.4ghz collector current @ 25c versus compression and fr equency temperatures: -40c; 20c; +80c vc=7.5v pul se= 100s, duty cycle 20% collector quiescent current versus ti & vctrl an d temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 0 1 2 3 4 5 6 ti/vctrl (v) ic (a) vctrl ttl input voltage +80 c +80 c - 40 c - 40 c 20 c 20 c
x-band high power amplifier cha7012 ref. : dscha70129082- 23 march 09 7/10 specificatio ns subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 temperatures: -40c; 20c;+80c vc=7.5v pulse= 100s, duty cycle 20% collector current control versus control voltage & temperature collector current control versus control voltage an d temperature temperatures: -40c; 20c; +80c vc=7.5v pulse= 100s, duty cycle20% ttl input current versus ttl voltage and temperatur e ttl input current versus ttl voltage and temperatur e 0 5 10 15 20 25 30 35 40 0 1 2 3 4 5 6 vctrl (v) ictrl (ma) +80c -40c +20c +80c -40c +20c 0 0.2 0.4 0.6 0.8 1 1.2 0 1 2 3 4 5 6 v ttl( v) i ttl (ma) +80c -40c +20c
cha7012 x-band high power amplifier ref. : dscha70129082- 23 march 09 8/10 specificatio ns subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 chip mechanical data and pin references chip thickness = 100m +/- 10 m rf pads (1, 12) = 96 x 196m2 dc pads (2, 3, 4, 5, 9,15, 19, 20, 21, 22) = 96 x 9 6m2 dc pads (7, 17) = 192 x 96m2 dc pads (11, 13) = 288 x 96m2 pin number pin name description 1 in input rf 8, 16 nc 5, 9, 15, 19 vctrl collector current control voltag e 2, 22 ti ttl input 4, 20 to ttl output 6, 10, 14, 18 gnd ground (nc) 3, 7, 11, 13, 17, 21 v,vc1,vc2 power supply voltage 12 out output rf 2 3 4 5 6 7 8 9 10 11 22 21 20 19 18 17 16 15 14 13
x-band high power amplifier cha7012 ref. : dscha70129082- 23 march 09 9/10 specificatio ns subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 bonding recommendations for thermal and electrical considerations, the chip should be brazed on a metal base plate. the rf, dc and modulation port inter-connections sh ould be done according to the following table: assembly recommendations in test fixture (using ttl circuits) 100pf non capacitive pad 10nf 1f 100f in out ti* vc* ti* vc* ti* vc* ti* vc* * performances obtained with the same accesses conn ected to the same supply note: supply feed should be capacitively by-passed. 25m diameter gold wire is to be preferred. port connection in (1) inductance (lbonding) = 0.3nh 400m length with wire diameter of 25 m out (12) inductance (lbonding) = 0.3nh 400m length with wire diameter of 25 m dc pads to 1 st decoupling level for double bonding inductance (lbonding) =0.7nh two 1.2mm length wires with a diameter of 25 m dc pads to 1 st decoupling level for single bonding inductance (lbonding) =1nh one 1.2mm length wires with a diameter of 25 m 1 st decoupling level to 2 nd decoupling level for double bonding inductance (lbonding) =0.7nh two 1.2mm length wires with a diameter of 25 m 1 st decoupling level to 2 nd decoupling level for single bonding inductance (lbonding) =1nh one 1.2mm length wires with a diameter of 25 m
cha7012 x-band high power amplifier ref. : dscha70129082- 23 march 09 10/10 specificati ons subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 assembly recommendations in test fixture (using analog biasing circuits) in out vc vctrl 100pf 10nf 1f 100f vc vctrl in out vc vctrl vc vctrl 100pf 10nf 1f 100f 100pf 10nf 1f 100f vc vctrl vc vctrl note: supply feed should be capacitively by-passed. 25m diameter gold wire is to be preferred. ordering information chip form : CHA7012-99F/00 information furnished is believed to be accurate an d reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of u se of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or o therwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publicat ion supersedes and replaces all information previou sly supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical co mponents in life support devices or systems without express written approval from united monolithic semiconductors s.a.s.
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